FESD05P30ZL ? 5 v, 30 pf un idirectional esd protector ? 2014 fairchild semiconductor corporation www.fairchildsemi.com FESD05P30ZL rev. 1.0.0 october 2014 FESD05P30ZL 5 v, 30 pf unidirectional esd protector features ? iec61000-4-2, 30 kv contact, 30 kv air ? iec61000-4-5, i pp = 5 a (8/20 s) ? expanded working voltage, v rwm = 5.0 v +10% =5.5 v ? very low clamping voltage, v c =8.8 v at 5 a (typical) ? ultra small so d882 package ? fits solder pad of 0402 and dfn 2l ? rohs compliant and halogen free ? qualified with ir reflow and wave soldering applications ? mobile and portable devices ? space constrained systems ? usb 5 v power protections ? general-purpose esd protection in 5 v applications ordering information part number top mark package packing method FESD05P30ZL a sod882 tape and reel description the FESD05P30ZL esd protector offers break through size and clamping performance. the device is capable of suppressing up to 50 w of 8 x 20 sec peak pulse power. it turns on at typical 6.5 v and clamp at 8.8 v in a 5 a surge. it responses fast and effective against to esd/ surge events. the design has been specifically optimized for 5 v appli- cations. it can be operated at 5 v with 10% tolerance. it is also rohs compliant and halogen free. all this capability is packed into a small, flat package, opti- mized for space constrained applications with similar xy dimensions to a industrial standard 0402 or sod923. the fesdxzl family supports a max z dimension of 0.5 mm. it is therefore specifically designed to support low clear- ance applications. cathode anode
FESD05P30ZL ? 5 v, 30 pf un idirectional esd protector ? 2014 fairchild semiconductor corporation www.fairchildsemi.com FESD05P30ZL rev. 1.0.0 2 absolute maximum ratings (1) stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. in addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. values are at t a = 25c unless otherwise noted. note: 1. all tests conducted at t a = t j = 25c unless otherwise noted. electrical breakdown characteristics (2), (3) values are at t a = 25c unless otherwise noted. notes: 2. all tests conducted at t a = t j = 25c unless otherwise noted. 3. i t = 300 sec square wave current pulse . surge response characteristics (4) values are at t a = 25c unless otherwise noted. note: 4. all tests conducted at t a = t j = 25c unless otherwise noted. symbol parameter value unit p d total power dissipation 250 mw esd electrostatic discharge capability iec61000-4-2 contact 30 kv iec61000-4-2 air 30 t j operating junction temperature range -55 to +150 c t stg storage temperature range -55 to +150 c symbol parameter conditions min. typ. max. unit v br breakdown voltage i t = 1 ma 6.2 v v rwm reverse standoff voltage i t ? 1 a5.5v i r maximum leakage v r = 5.0 v 0.5 a symbol parameter conditions min. typ. max. unit tlp surge response r d dynamic resistance tlp, t p = 100 ns, cathode to anode 0.31 8 x 20 sec exponential current surge response i pp test surge current iec61000-4-5, 8 x 20 sec current surge 5a v c clamping voltage i pp = 5 a 8.8 v r d dynamic resistance calculated at i pp 0.47 p ppm peak pulse power calculated (i ppm x v c )50w c j junction capacitance v r = 0 v, f = 1 mhz 31 38 pf
FESD05P30ZL ? 5 v, 30 pf un idirectional esd protector ? 2014 fairchild semiconductor corporation www.fairchildsemi.com FESD05P30ZL rev. 1.0.0 3 typical performance characteristics figure 1. clamping voltage vs. peak pulse current power (8 x 20 s waveform ) figure 2. 8 x 20 sec pulse waveform figure 3. transmission line pulsing (tlp) plot figure 4. leakage current vs. temperature figure 5. typical capacitance 0123456 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 clamping voltage, v c [v] peak pulse current, i pp [a] 0 2 4 6 8 10 12 0 2 4 6 8 101214 tlp voltage, [v] tlp current, [a] -50 0 50 100 150 0 20 40 60 80 100 120 typical leakate current, i r [na] ambient temperature , t a [ o c] v r = 5 v 0123456 10 15 20 25 30 35 typical capacitance, c j [pf] reverse voltage, v r [v] t a = 25 o c
FESD05P30ZL ? 5 v, 30 pf un idirectional esd protector ? 2014 fairchild semiconductor corporation www.fairchildsemi.com FESD05P30ZL rev. 1.0.0 4 physical dimension figure 6. 2-lead, sod882, 0.60 x 1.00 mm body, 0.65 mm pitch 7 < 3 3 , 1 1 2 , ' ( 1 7 , ) , & $ 7 , 2 1 0 $ ; 5 ( ) / $ 1 ' 3 $ 7 7 ( 5 1 5 ( & 2 0 0 ( 1 ' $ 7 , 2 1 1 2 7 ( 6 8 1 / ( 6 6 2 7 + ( 5 : , 6 ( 6 3 ( & , ) , ( ' $ 1 2 , 1 ' 8 6 7 5 < 6 7 $ 1 ' $ 5 ' $ 3 3 / , ( 6 7 2 7 + , 6 3 $ & . $ * ( % $ / / ' , 0 ( 1 6 , 2 1 6 $ 5 ( , 1 0 , / / , 0 ( 7 ( 5 6 & ' , 0 ( 1 6 , 2 1 6 $ 5 ( ( ; & / 8 6 , 9 ( 2 ) % 8 5 5 6 0 2 / ' ) / $ 6 + $ 1 ' 7 , ( % $ 5 ( ; 7 5 8 6 , 2 1 6 ' ) 6 & ' ( 5 , 9 ( ' / $ 1 ' 3 $ 7 7 ( 5 1 5 ( & 2 0 0 ( 1 ' $ 7 , 2 1 ( ' 5 $ : , 1 * 1 8 0 % ( 5 $ 1 ' 5 ( 9 , 6 , 2 1 0 . 7 6 2 ' $ 5 ( 9
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